When the magnetic field is adjusted to 5 and 7 T (the blue and the green line), respectively, PF-6463922 the absolute value of the current continues to decrease at the same voltage conditions. It is noteworthy that from Figure 5a, we can clearly see that ΔI from 1 to 3 T is larger than that from 3 to 7 T where the voltage is −4 V. That is to say, the I-V of Ag2Te GS-9973 price sample is more sensitive at low magnetic field. This phenomenon reveals that the Ag2Te nanowires are suitable for low magnetic field sensor.

In addition, the magneto-resistance curves under different temperature conditions are illustrated in Figure 5b. The MR was calculated as MR = (ρ H  − ρ 0)/ρ 0. The MR (Δρ/ρ) increases when the magnetic field increases gradually. At each temperature, the curves for the sample

look very similar. But at T = 5 K, MR rises faster slightly than other higher temperature conditions. As shown in the black curve, the Δρ/ρ value is centered at 11.79% when the magnetic field is 4 T at a temperature of 300 K. When the temperature decreased at 5 K, keeping the same magnetic field GF120918 cell line of 4 T, the Δρ/ρ value increased to 38.35% (purple curves). These results experimentally suggest that the Δρ/ρ of Ag2Te NWs increased with the temperature decreasing gradually at the same magnetic field. Here, we also found a novel phenomenon that the magneto-resistance crosses over from a linear to a quadratic dependence on H (T) at the place of 4 T approximately. The Δρ/ρ shows a linear dependence on the low magnetic field (Figure 5b), but from the slope, we can notice that Δρ/ρ increases nonlinearly with increasing temperature at high H(T), which is different from the previous report [18, 19]. We deduced that this novel phenomenon was caused by the nanostructure of the sample. Figure 5 I-V characteristics of the Ag 2 Te nanowires

at room temperature and normalized magneto-resistance for Ag 2 Te nanowires. (a) I-V characteristics of the Ag2Te nanowires at room temperature under a series of magnetic field, B = 1, 3, 5, and 7 T; (b) the normalized magneto-resistance Δρ (T, H) / ρ (T, H) for Ag2Te nanowires as a function of magnetic field H at a series of temperatures T = 5, 10, 20, 40, many 80, 160, and 300 K. Temperature-dependent MR of zero field (R 0) and field (R H ) resistivity is shown in Figure 6. The MR was calculated as MR = (R H − R 0) / R 0, and the sample behavior was measured in temperature from 300 to 4 K. It is noteworthy that the resistivity measured by the magnetic field of 9 T becomes larger with the increasing magnetic field, and the field resistivity curve is peaked with a strong maximum at 66 K exhibited by the red line. Then, the product exhibits a steep decline of the resistivity with increasing temperature as illustrated in the figure.