Chem Rev 1995, 95:735–758.CrossRef 43. Zhao Z, Liu Q: Mechanism of higher photocatalytic activity of anatase TiO 2 doped with nitrogen under visible-light irradiation from density functional
theory calculation. J Phys D Appl Phys 2008, 41:025105.CrossRef 44. Xu Y, Schoonen MAA: The absolute energy positions of conduction and valence bands of selected semiconducting minerals. Am Mineral 2000, 85:543–556. 45. Kim YI, Atherton SJ, Brigham ES, Mallouk TE: Sensitized layered metal oxide semiconductor particles for photochemical hydrogen evolution from nonsacrificial electron donors. J Phys Chem 1993, 97:11802–11810.CrossRef 46. Tang J, Ye J: Photocatalytic and photophysical properties of visible-light-driven photocatalyst ZnBi 12 O 20 . Chem Phys Lett 2005, 410:104–107.CrossRef 47. Putz MV, Russo N, Sicilia
E: About the Mulliken FHPI purchase electronegativity in DFT. Theor Chem Acc 2005, 114:38–45.CrossRef 48. Frese KW: Simple method for estimating energy levels of solids. J Vac Sci Technol 1979, 16:1042–1044.CrossRef Competing interests The selleck kinase inhibitor authors declare that they have no competing interests. Authors’ contributions SW conceived the idea and designed the calculated model. YQ and RR carried out the calculations and data analysis. JB and LL participated in the design of the study and helped in drafting the manuscript. All authors read and approved the final manuscript.”
“Background A metal-insulator-metal (MIM) structure-based resistive random access memory (RRAM) device has attracted much Farnesyltransferase attention for next-generation high-density and low-cost nonvolatile memory applications MI-503 manufacturer due to its long data retention, simple structure, high-density integration, low-power consumption, fast operation speed, high scalability, simple constituents, and easy integration
with the standard metal oxide semiconductor (MOS) technology [1]. In addition to transition metal oxide-based RRAMs [2, 3], many rare-earth metal oxides, such as Lu2O3, Yb2O3, Sm2O3, Gd2O3, Tm2O3, Er2O3, Nd2O3, Dy2O3, and CeO2[4–10], show very good resistive switching (RS) properties. Among them, CeO2 thin films having a strong ability of oxygen ion or oxygen vacancy migration attract a lot of attention for RRAM applications [8–10]. CeO2 is a well-known rare-earth metal oxide with a high dielectric constant (26), large bandgap (6 eV), and high refractive index (2.2 to 2.3). The cerium ion in the CeO2 film exhibits both +3 and +4 oxidation states, which are suitable for valency change switching process [11, 12]. Forming-free resistive switching and its conduction mechanism are very important for nonvolatile memory applications. In addition, oxygen vacancies or ions play a unique role in the resistive switching phenomenon [13]. Therefore, CeO2 is expected to have potentials for applications in nonvolatile resistive switching memory devices [14]. However, there are quite limited reports on the resistive switching properties of CeO2.